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DMN3110SQ-7 - Diodes Incorporated

Description: Low On-Resistance Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4)

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DMN3110SQ-7 - Diodes Incorporated PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT23 (H=1.1mm)
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DMN3110SQ-7 - Diodes Incorporated  - 3D model - SOT23 (3-Pin) - SOT23 (H=1.1mm)
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DMN3110SQ-7 Details

  • Manufacturer Part Number:

    DMN3110SQ-7

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    SOT-23, 3 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    3

  • Additional Feature:

    HIGH RELIABILITY

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    2.5 A

  • Drain-source On Resistance-Max:

    0.073 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    39.5 pF

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TR

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.3 W

  • Pulsed Drain Current-Max (IDM):

    25 A

  • Reference Standard:

    AEC-Q101; MIL-STD-202

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

DMN3110SQ-7 Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the DMN3110SQ-7 is -55°C to 150°C.
  • Yes, the DMN3110SQ-7 is designed for high-frequency switching applications up to 1 GHz, making it suitable for high-speed switching and RF applications.
  • The maximum voltage rating for the DMN3110SQ-7 is 30V.
  • Yes, the DMN3110SQ-7 is a low-power device with a typical on-state resistance of 11 ohms, making it suitable for low-power applications.
  • The DMN3110SQ-7 comes in a QFN-12 package.

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