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DMNH6011LK3-13 - Diodes Incorporated

Description: N-Channel 55 V 80A (Tc) 1.6W (Ta) Surface Mount TO-252 (DPAK)

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DMNH6011LK3-13 - Diodes Incorporated PCB footprint - Other - Other - DMNH6011LK3-13
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DMNH6011LK3-13 - Diodes Incorporated  - 3D model - Other - DMNH6011LK3-13
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DMNH6011LK3-13 Details

  • Manufacturer Part Number:

    DMNH6011LK3-13

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    20 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    147 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    80 A

  • Drain-source On Resistance-Max:

    0.018 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    127 pF

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TR

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    3 W

  • Pulsed Drain Current-Max (IDM):

    180 A

  • Reference Standard:

    MIL-STD-202

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

DMNH6011LK3-13 Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to use a thermal pad on the bottom of the package, connected to a large copper area on the PCB. This helps to dissipate heat efficiently. Additionally, it's recommended to use a minimum of 2oz copper thickness and to keep the thermal vias as close to the package as possible.
  • To ensure the device is properly biased for optimal performance, it's essential to follow the recommended operating conditions and biasing schemes outlined in the datasheet. This includes setting the correct input voltage, output voltage, and current limits. Additionally, it's recommended to use a stable and low-noise power supply to minimize any potential issues.
  • Potential failure modes for the DMNH6011LK3-13 include overheating, overvoltage, and overcurrent. To mitigate these, it's essential to implement proper thermal management, such as using a heat sink or thermal interface material. Additionally, ensure that the device is operated within the recommended specifications, and consider adding overvoltage and overcurrent protection circuits to prevent damage.
  • To troubleshoot issues with the DMNH6011LK3-13, start by reviewing the datasheet and application notes to ensure that the device is being used within the recommended specifications. Next, use a multimeter or oscilloscope to measure the input and output voltages, currents, and temperatures. Check for any signs of overheating, such as excessive temperature or thermal shutdown. If the issue persists, consider consulting with a Diodes Incorporated support engineer or seeking assistance from a qualified electronics engineer.
  • Yes, it's essential to take proper ESD protection measures when handling the DMNH6011LK3-13. This includes using an ESD wrist strap or mat, storing the devices in anti-static packaging, and avoiding touching the pins or leads. Additionally, ensure that the workspace is ESD-safe and that all equipment is properly grounded.

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