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DMP3010LK3Q-13 - Diodes Incorporated

Description: DIODES INC. - DMP3010LK3Q-13 - Power MOSFET, P Channel, 30 V, 17 A, 0.0065 ohm, TO-252 (DPAK), Surface Mount

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DMP3010LK3Q-13 - Diodes Incorporated PCB footprint - Other - Other - DMP3010LK3Q-13
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DMP3010LK3Q-13 Details

  • Manufacturer Part Number:

    DMP3010LK3Q-13

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    DPAK-3/2

  • Similar Group:

    TR0810031002YYYY10051224

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    113 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    14.5 A

  • Drain-source On Resistance-Max:

    0.0102 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    774 pF

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TR

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    3.4 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Reference Standard:

    AEC-Q101; IATF 16949; MIL-STD-202

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

DMP3010LK3Q-13 Frequently Asked Questions (FAQs)

  • A thermal pad is recommended to be connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • The device requires a bias voltage of 5V to 15V, and the gate-source voltage should be between -2V to 2V. A gate resistor of 1kΩ to 10kΩ is recommended to prevent oscillations.
  • The maximum allowable power dissipation is 2.5W. However, it's recommended to derate the power dissipation based on the ambient temperature and PCB thermal design.
  • Yes, the DMP3010LK3Q-13 is suitable for high-frequency switching applications up to 100kHz. However, the device's switching characteristics and parasitic inductance should be considered in the design.
  • The device has an internal ESD protection diode, but it's still recommended to follow proper ESD handling procedures during assembly and handling. A minimum of 1kΩ series resistor and a 100nF capacitor can be added to the gate pin for additional ESD protection.

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DMP3010LK3Q-13 Overview

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