Part Image

DMT3020LDV-13 - Diodes Incorporated

Description: MOSFET MOSFET BVDSS: 25V 30V PowerDI3333-8 T&R 3K

Download DMT3020LDV-13 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
DMT3020LDV-13 - Diodes Incorporated PCB footprint - Other - Other - PowerDI3333-8 (Type UXC)_2021
click to zoom
3D Models
DMT3020LDV-13 - Diodes Incorporated  - 3D model - Other - PowerDI3333-8 (Type UXC)_2021
click to zoom

DMT3020LDV-13 Details

  • Manufacturer Part Number:

    DMT3020LDV-13

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    24 Weeks

  • Date Of Intro:

    2018-05-10

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    8.5 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    32 A

  • Drain-source On Resistance-Max:

    0.02 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    27 pF

  • JESD-30 Code:

    S-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TR

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.9 W

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Reference Standard:

    MIL-STD-202

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

DMT3020LDV-13 Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the DMT3020LDV-13 is -40°C to 125°C.
  • To ensure the stability of the output voltage, it is recommended to use a minimum output capacitance of 10uF and a maximum equivalent series resistance (ESR) of 1 ohm.
  • The maximum input voltage that the DMT3020LDV-13 can handle is 26V.
  • Yes, the DMT3020LDV-13 is suitable for high-reliability applications, as it is qualified to AEC-Q100 Grade 1, which means it can operate in harsh environments.
  • The power dissipation of the DMT3020LDV-13 can be calculated using the formula: Pd = (Vin - Vout) x Iout, where Vin is the input voltage, Vout is the output voltage, and Iout is the output current.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

DMT3020LDV-13 Overview

Use the download button to access the DMT3020LDV-13 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like DMT30, or try a keyword search, such as Power Field-Effect Transistors

Parts related to DMT3020LDV-13

Showing 0 results