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DMT6009LJ3 - Diodes Incorporated

Description: Trans MOSFET N-CH 60V 74.5A 3-Pin(3+Tab) TO-251 Tube

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DMT6009LJ3 - Diodes Incorporated PCB footprint - Other - Other - DMT6009LJ3-3
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DMT6009LJ3 - Diodes Incorporated  - 3D model - Other - DMT6009LJ3-3
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DMT6009LJ3 Details

  • Manufacturer Part Number:

    DMT6009LJ3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    39.8 mJ

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    74.5 A

  • Drain-source On Resistance-Max:

    0.01 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    41 pF

  • JEDEC-95 Code:

    TO-251

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Packing Method:

    TUBE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    2.9 W

  • Power Dissipation-Max (Abs):

    83.3 W

  • Pulsed Drain Current-Max (IDM):

    280 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

DMT6009LJ3 Frequently Asked Questions (FAQs)

  • The recommended PCB layout for the DMT6009LJ3 involves placing the device close to the power source, using a solid ground plane, and minimizing the length of the input and output traces to reduce parasitic inductance and capacitance. Additionally, it is recommended to use a 4-layer PCB with a dedicated power plane and a dedicated ground plane to reduce noise and improve thermal performance.
  • To ensure proper thermal management of the DMT6009LJ3, it is recommended to provide a thermal pad on the PCB, use a heat sink with a thermal interface material, and ensure good airflow around the device. The thermal pad should be connected to a solid ground plane to improve heat dissipation. Additionally, the device should be placed in a location that minimizes thermal coupling to other components on the PCB.
  • The maximum operating temperature range for the DMT6009LJ3 is -40°C to 125°C. However, the device can be operated at a junction temperature of up to 150°C for short periods of time. It is recommended to derate the device's power dissipation at high temperatures to ensure reliable operation.
  • To protect the DMT6009LJ3 from overvoltage and overcurrent conditions, it is recommended to use a voltage regulator with overvoltage protection, a current limiter, and a fuse in series with the input power supply. Additionally, the device should be operated within its recommended operating conditions, and the input and output pins should be protected with TVS diodes or zener diodes to prevent voltage spikes and transients.
  • The recommended input capacitance for the DMT6009LJ3 is 10uF to 22uF, and the recommended output capacitance is 10uF to 47uF. The input and output capacitance values should be selected based on the specific application requirements, such as the input voltage ripple and the output voltage stability.

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