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DMT68M8LSS-13 - Diodes Incorporated

Description: MOSFET MOSFETBVDSS: 41V-60V

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DMT68M8LSS-13 - Diodes Incorporated PCB footprint - Small Outline Packages - Small Outline Packages - SO-8 height 1.7
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DMT68M8LSS-13 - Diodes Incorporated  - 3D model - Small Outline Packages - SO-8 height 1.7
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DMT68M8LSS-13 Details

  • Manufacturer Part Number:

    DMT68M8LSS-13

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOP-8

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    54.2 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    12.1 A

  • Drain-source On Resistance-Max:

    0.0085 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    48 pF

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.9 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Reference Standard:

    MIL-STD-202

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

DMT68M8LSS-13 Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance would be to have a solid ground plane on the bottom layer, and a thermal relief pattern on the top layer. This helps to dissipate heat efficiently. Additionally, it's recommended to have a minimum of 2oz copper thickness and a thermal via array under the device to improve heat dissipation.
  • To ensure proper soldering, use a soldering iron with a temperature range of 250-260°C. Apply a small amount of solder paste to the pads, and use a reflow oven or a hot air gun to solder the device. Make sure to follow the recommended soldering profile and avoid overheating the device.
  • When handling the device, take precautions to prevent electrostatic discharge (ESD) damage. Use an ESD wrist strap or mat, and handle the device by the body or pins, avoiding touching the die. Also, avoid exposing the device to extreme temperatures, humidity, or physical stress.
  • To troubleshoot issues with the device, start by checking the power supply voltage and ensuring it's within the recommended range. Verify that the input and output capacitors are properly connected and of the correct value. Use an oscilloscope to check the output waveform and verify that it's within the expected specifications. If issues persist, consult the datasheet or contact Diodes Incorporated support for further assistance.
  • The device has a maximum junction temperature of 150°C. Ensure good airflow around the device, and consider using a heat sink if the device is expected to operate in high-temperature environments. Also, avoid overheating the device during soldering or rework operations.

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DMT68M8LSS-13 Overview

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