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DMTH10H003SPSW-13 - Diodes Incorporated

Description: 100V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8

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DMTH10H003SPSW-13 - Diodes Incorporated - PCB symbol
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DMTH10H003SPSW-13 - Diodes Incorporated PCB footprint - Other - Other - PowerDI5060-8 (SWP) (Type Q)
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DMTH10H003SPSW-13 - Diodes Incorporated - 3D model - Other - PowerDI5060-8 (SWP) (Type Q)
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DMTH10H003SPSW-13 Details

  • Manufacturer Part Number:

    DMTH10H003SPSW-13

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    20 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    612 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    166 A

  • Drain-source On Resistance-Max:

    0.003 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    34 pF

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TR

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    167 W

  • Pulsed Drain Current-Max (IDM):

    664 A

  • Reference Standard:

    MIL-STD-202

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

DMTH10H003SPSW-13 Frequently Asked Questions (FAQs)

  • Diodes Incorporated recommends a PCB layout with a solid ground plane and thermal vias to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended for optimal thermal performance.
  • To ensure reliable operation in high-temperature environments, it is recommended to derate the device's power dissipation according to the temperature derating curve provided in the datasheet. Additionally, ensure good thermal design and heat sinking to keep the junction temperature below the maximum rated value.
  • Diodes Incorporated recommends a soldering profile with a peak temperature of 260°C (500°F) for a maximum of 10 seconds. The device should be soldered using a solder with a melting point of 220°C (428°F) or higher.
  • Yes, the DMTH10H003SPSW-13 is qualified to AEC-Q101 standards, making it suitable for high-reliability and automotive applications. However, it is recommended to consult with Diodes Incorporated's application engineers to ensure the device meets the specific requirements of your application.
  • Diodes Incorporated recommends using a human-body model (HBM) ESD protection of at least 2kV and a machine model (MM) ESD protection of at least 200V to prevent damage to the device.

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DMTH10H003SPSW-13 Overview

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