Part Image

DMTH10H025LK3-13 - Diodes Incorporated

Description: MOSFET MOSFET BVDSS: 61V-100V

Download DMTH10H025LK3-13 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
DMTH10H025LK3-13 - Diodes Incorporated PCB footprint - Other - Other - DMTH10H025LK3-13-1
click to zoom
3D Models
DMTH10H025LK3-13 - Diodes Incorporated  - 3D model - Other - DMTH10H025LK3-13-1
click to zoom

DMTH10H025LK3-13 Details

  • Manufacturer Part Number:

    DMTH10H025LK3-13

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Date Of Intro:

    2018-06-15

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    12.5 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    51.7 A

  • Drain-source On Resistance-Max:

    0.0437 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    20 pF

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TR

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    100 W

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Reference Standard:

    MIL-STD-202

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

DMTH10H025LK3-13 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the DMTH10H025LK3-13 is a 2x2 array of 0.5mm diameter pads with a 1.3mm pitch, as shown in the Diodes Incorporated recommended land pattern.
  • To ensure proper soldering, use a soldering iron with a temperature of 260°C to 280°C, and apply a small amount of solder paste to the PCB pads. Use a soldering technique that minimizes the risk of overheating the component.
  • The DMTH10H025LK3-13 has an operating temperature range of -40°C to 150°C, but it's recommended to operate within -20°C to 125°C for optimal performance and reliability.
  • Yes, the DMTH10H025LK3-13 is suitable for high-reliability applications, such as automotive, industrial, and medical devices, due to its high-quality manufacturing process and rigorous testing.
  • Handle the DMTH10H025LK3-13 by the body, avoiding touching the leads or electrical contacts. Store the component in a dry, cool place, away from direct sunlight and moisture, and use anti-static packaging to prevent ESD damage.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

DMTH10H025LK3-13 Overview

Use the download button to access the DMTH10H025LK3-13 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like DMTH1, or try a keyword search, such as Power Field-Effect Transistors

Parts related to DMTH10H025LK3-13

Showing 0 results