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DMTH6009LK3-13 - Diodes Incorporated

Description: N-Channel 60 V 14.2A (Ta), 59A (Tc) 3.2W (Ta), 60W (Tc) Surface Mount TO-252-3

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DMTH6009LK3-13 - Diodes Incorporated PCB footprint - Other - Other - TO252 (DPAK)_2026-2.2
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DMTH6009LK3-13 Details

  • Manufacturer Part Number:

    DMTH6009LK3-13

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    6

  • Additional Feature:

    HIGH RELIABILITY

  • Avalanche Energy Rating (Eas):

    20.6 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    14.2 A

  • Drain-source On Resistance-Max:

    0.01 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    90 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

DMTH6009LK3-13 Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • The device requires a stable input voltage and a proper biasing circuit to ensure optimal performance. A voltage regulator and a bias resistor network can be used to achieve this.
  • Handle the device in an ESD-controlled environment, wear an ESD strap, and use ESD-safe tools and materials to prevent damage. Avoid touching the device pins or exposing it to static electricity.
  • The device is rated for operation up to 125°C. However, the maximum junction temperature should not exceed 150°C. Ensure proper thermal management and derate the device accordingly.
  • Use a multimeter to measure voltage and current at different points in the circuit. Check for proper biasing, input voltage, and output loading. Consult the datasheet and application notes for troubleshooting guidelines.

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DMTH6009LK3-13 Overview

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