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DMTH6009LK3Q-13 - Diodes Incorporated

Description: MOSFET N-Ch Enh Mode Fet 60Vdss 20Vgss 60W

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DMTH6009LK3Q-13 - Diodes Incorporated PCB footprint - Other - Other - DMTH6009LK3Q-13-2
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DMTH6009LK3Q-13 Details

  • Manufacturer Part Number:

    DMTH6009LK3Q-13

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    20 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    6

  • Additional Feature:

    HIGH RELIABILITY

  • Avalanche Energy Rating (Eas):

    20.6 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    59 A

  • Drain-source On Resistance-Max:

    0.01 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    41 pF

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TR

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    60 W

  • Pulsed Drain Current-Max (IDM):

    90 A

  • Reference Standard:

    AEC-Q101; MIL-STD-202

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

DMTH6009LK3Q-13 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the DMTH6009LK3Q-13 is a 3x3mm QFN package with a 0.5mm pitch. The datasheet provides a recommended land pattern and solder mask design guidelines.
  • To ensure reliable operation in high-temperature environments, ensure that the device is operated within its recommended operating temperature range (-40°C to 125°C). Also, follow proper thermal design and layout guidelines to minimize thermal resistance and ensure adequate heat dissipation.
  • The DMTH6009LK3Q-13 has built-in ESD protection, but it's still important to follow proper ESD handling and storage procedures to prevent damage. The device can withstand ESD up to 2kV human body model (HBM) and 200V machine model (MM).
  • Yes, the DMTH6009LK3Q-13 is suitable for high-reliability and automotive applications. It's AEC-Q100 qualified and meets the requirements for automotive-grade components.
  • To troubleshoot issues with the DMTH6009LK3Q-13, start by reviewing the datasheet and application notes. Check for proper power supply, signal integrity, and thermal design. Use oscilloscopes and logic analyzers to debug signal issues. If the problem persists, contact Diodes Incorporated's technical support for further assistance.

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DMTH6009LK3Q-13 Overview

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