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E3M0160120D - Wolfspeed

Description: 1200 V, 160 mΩ, TO-247-3 package, Automotive qualified, Discrete SiC MOSFET

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E3M0160120D - Wolfspeed PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - E3M0160120D
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3D Models
E3M0160120D - Wolfspeed  - 3D model - Transistor Outline, Vertical - E3M0160120D
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E3M0160120D Details

  • Manufacturer Part Number:

    E3M0160120D

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Wolfspeed

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    17.9 A

  • Drain-source On Resistance-Max:

    0.208 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    2 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    103 W

  • Pulsed Drain Current-Max (IDM):

    34 A

  • Reference Standard:

    AEC-Q101; IEC-60747-8-4

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

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E3M0160120D Overview

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