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E3M0160120K - Wolfspeed

Description: 1200 V, 160 mΩ, TO-247-4 package, Automotive qualified, Discrete SiC MOSFET

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PCB Footprints
E3M0160120K - Wolfspeed PCB footprint - Other - Other - TO-247-4L
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E3M0160120K - Wolfspeed  - 3D model - Other - TO-247-4L
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E3M0160120K Details

  • Manufacturer Part Number:

    E3M0160120K

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Wolfspeed

  • YTEOL:

    6

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    17.9 A

  • Drain-source On Resistance-Max:

    0.208 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    2 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    103 W

  • Pulsed Drain Current-Max (IDM):

    34 A

  • Reference Standard:

    AEC-Q101; IEC-60747-8-4

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

E3M0160120K Frequently Asked Questions (FAQs)

  • Wolfspeed provides a reference design guide for PCB layout and thermal management, which includes recommendations for copper thickness, thermal vias, and heat sink attachment. It's essential to follow these guidelines to ensure optimal performance and reliability.
  • When selecting a gate driver for the E3M0160120K, consider the driver's output current capability, voltage rating, and rise/fall times. Ensure the driver can provide a high enough current to charge/discharge the gate capacitance quickly, and that it can handle the device's voltage rating. Additionally, consider the driver's isolation rating, if required.
  • Operating the E3M0160120K at a higher Tj than recommended can lead to reduced lifespan, increased thermal resistance, and decreased performance. It may also cause the device to enter thermal runaway, leading to catastrophic failure. Always ensure the device operates within the recommended Tj range to maintain reliability and performance.
  • To ensure optimal performance, follow the recommended biasing and configuration guidelines provided in the datasheet and application notes. This includes setting the correct gate-source voltage, drain-source voltage, and current limits. Additionally, consider the device's internal capacitances and inductances when designing the circuit.
  • The E3M0160120K is a sensitive device and requires proper ESD protection during handling and assembly. Follow standard ESD handling procedures, such as using wrist straps, anti-static bags, and ESD-safe workstations. Ensure that the device is properly grounded during assembly and testing to prevent damage.

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E3M0160120K Overview

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