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EGP20B - onsemi

Description: High surge current capability; Glass passivated cavity-free junction; Low leakage current; Low forward voltage, high current capability; Superfast recovery time for high efficiency

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EGP20B - onsemi PCB footprint - Diodes, Axial Diameter Horizontal Mounting - Diodes, Axial Diameter Horizontal Mounting - AXIAL LEAD DO 204 CASE 017AJ ISSUE O
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  • Datasheet Download Datasheet
  • Stock & Prices $ Price & Stock for EGP20B
  • Part Number EGP20B
  • Manufacturer onsemi
  • Pin Count 2
  • Part Category Diode
  • Package Category Diodes, Axial Diameter Horizontal Mounting
  • Footprint Name Diodes, Axial Diameter Horizontal Mounting - AXIAL LEAD DO 204 CASE 017AJ ISSUE O
  • Released Date Mar 29, 2023
  • Last Modified Date Jan 22, 2025 4:53 PM UTC
  • Pinout / Pin List Click Here (Member Only)

EGP20B Details

  • Manufacturer Part Number:

    EGP20B

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    AXIAL LEAD DO 204

  • Package Description:

    GLASS PACKAGE-2

  • Manufacturer Package Code:

    017AJ

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.84

  • Additional Feature:

    LOW LEAKAGE CURRENT

  • Application:

    EFFICIENCY

  • Breakdown Voltage-Min:

    100 V

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.95 V

  • JEDEC-95 Code:

    DO-15

  • JESD-30 Code:

    O-LALF-W2

  • JESD-609 Code:

    e3

  • Non-rep Pk Forward Current-Max:

    75 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -65 °C

  • Output Current-Max:

    2 A

  • Package Body Material:

    GLASS

  • Package Shape:

    ROUND

  • Package Style:

    LONG FORM

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Power Dissipation-Max:

    3.13 W

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    100 V

  • Reverse Current-Max:

    5 µA

  • Reverse Recovery Time-Max:

    0.05 µs

  • Reverse Test Voltage:

    100 V

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    WIRE

  • Terminal Position:

    AXIAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

EGP20B Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat. A minimum of 2oz copper thickness is recommended. Additionally, vias should be placed under the thermal pad to connect to an internal copper plane or a heat sink.
  • The EGP20B is rated for operation up to 150°C. To ensure reliable operation, it's essential to follow proper thermal design and layout guidelines, and to derate the device's power dissipation according to the temperature derating curve provided in the datasheet.
  • A gate drive voltage of 10-15V is recommended, with a current capability of at least 1A. This ensures fast switching times and minimizes power losses. The gate drive circuit should also be designed to provide a low inductance path to the gate terminal.
  • A transient voltage suppressor (TVS) or a zener diode can be used to clamp overvoltages. Overcurrent protection can be achieved using a current sense resistor and a comparator or an overcurrent protection IC. The device's built-in protection features, such as overtemperature shutdown and under-voltage lockout, should also be utilized.
  • A dead time of 100-200ns is typically recommended to prevent shoot-through currents and ensure reliable operation. The exact dead time value may vary depending on the specific application and switching frequency.

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EGP20B Overview

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