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EPC2036 - Efficient Power Conversion

Description: GANFET TRANS 100V 1A BUMPED DIE

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EPC2036 - Efficient Power Conversion PCB footprint - Other - Other - EPC2036-4
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EPC2036 - Efficient Power Conversion  - 3D model - Other - EPC2036-4
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EPC2036 Details

  • Manufacturer Part Number:

    EPC2036

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Contact Manufacturer

  • Package Description:

    DIE-4

  • ECCN Code:

    EAR99

  • Manufacturer:

    Efficient Power Conversion

  • Additional Feature:

    ULTRA LOW RESISTANCE

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    1 A

  • Drain-source On Resistance-Max:

    0.065 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-XXUC-X4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    SQUARE

  • Package Style:

    UNCASED CHIP

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    18 A

  • Surface Mount:

    YES

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UNSPECIFIED

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    GALLIUM NITRIDE

EPC2036 Frequently Asked Questions (FAQs)

  • The EPC2036 can operate from -55°C to 150°C, making it suitable for high-reliability applications.
  • The EPC2036 requires a bias voltage of 5V ± 10% on the VGS pin, and a voltage source of 3.3V ± 10% on the VCC pin. Ensure proper decoupling and filtering to minimize noise and ripple.
  • Use a 4-layer PCB with a solid ground plane, and ensure good thermal conductivity by using thermal vias and a heat sink. Keep the device away from high-current paths and noise sources.
  • Use a voltage clamp or a zener diode to limit the voltage, and consider adding a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions.
  • Use a high-speed, low-impedance gate drive circuit with a voltage swing of 5V to 10V, and ensure a rise and fall time of < 10 ns to minimize switching losses.

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