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ES1J - onsemi

Description: Fairchild ES1J SMT Fast Recovery Diode, 600V 1A, 35ns, 2-Pin DO-214AC

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ES1J - onsemi PCB footprint - Diodes Moulded - Diodes Moulded - SMA CASE 403AE ISSUE O
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ES1J - onsemi  - 3D model - Diodes Moulded - SMA CASE 403AE ISSUE O
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ES1J Details

  • Manufacturer Part Number:

    ES1J

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SMA

  • Package Description:

    SMA, 2 PIN

  • Manufacturer Package Code:

    403AE

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Application:

    EFFICIENCY

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.7 V

  • JEDEC-95 Code:

    DO-214AC

  • JESD-30 Code:

    R-PDSO-C2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    30 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    1 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Power Dissipation-Max:

    1.47 W

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    600 V

  • Reverse Current-Max:

    5 µA

  • Reverse Recovery Time-Max:

    0.035 µs

  • Reverse Test Voltage:

    600 V

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

ES1J Frequently Asked Questions (FAQs)

  • The maximum power dissipation of the ES1J is 3000 W for a 1 ms pulse. This is not explicitly stated in the datasheet, but it can be calculated using the device's thermal resistance and maximum junction temperature.
  • To choose the correct ES1J device, consider the maximum voltage and current requirements of your application. Select a device with a standoff voltage (VWM) that is higher than the maximum voltage in your system, and a peak pulse current (IPP) that is higher than the maximum current in your system.
  • The response time of the ES1J is typically less than 1 ns, which is fast enough to protect against most transient voltage events.
  • The ES1J is rated for operation up to 150°C, but its performance may degrade at high temperatures. Be sure to derate the device's power handling and voltage ratings according to the temperature derating curve in the datasheet.
  • To ensure proper soldering, follow the recommended soldering profile and use a solder with a melting point below 260°C. Avoid overheating the device, and use a soldering iron with a temperature-controlled tip.

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ES1J Overview

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Part Image ES1JR3G Taiwan Semiconductor

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