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ESD5401N-2/TR - Will Semiconductor

Description: DFN1006-2L ESD Protection Devices ROHS

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ESD5401N-2/TR - Will Semiconductor - PCB symbol
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ESD5401N-2/TR - Will Semiconductor PCB footprint - Other - Other - ESD5401N-2/TR-1
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ESD5401N-2/TR - Will Semiconductor - 3D model - Other - ESD5401N-2/TR-1
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ESD5401N-2/TR Details

  • Manufacturer Part Number:

    ESD5401N-2/TR

  • Part Life Cycle Code:

    Contact Manufacturer

  • Package Description:

    DFN1006-2L, 2 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Manufacturer:

    Will Semiconductor Ltd

  • Breakdown Voltage-Max:

    33 V

  • Breakdown Voltage-Min:

    27 V

  • Breakdown Voltage-Nom:

    29 V

  • Clamping Voltage-Max:

    45 V

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • Forward Voltage-Max (VF):

    1.25 V

  • JESD-30 Code:

    R-PDSO-N2

  • Non-rep Peak Rev Power Dis-Max:

    360 W

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity:

    UNIDIRECTIONAL

  • Reference Standard:

    IEC-61000-4-2,4-5

  • Rep Pk Reverse Voltage-Max:

    24 V

  • Reverse Current-Max:

    0.05 µA

  • Reverse Test Voltage:

    24 V

  • Surface Mount:

    YES

  • Technology:

    AVALANCHE

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

ESD5401N-2/TR Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal ESD protection involves placing the ESD5401N-2/TR as close as possible to the input pins, using short and wide traces, and minimizing the distance between the device and the protected IC. Additionally, a ground plane should be used to provide a low-impedance path for ESD discharge.
  • The ESD5401N-2/TR is designed to handle surge currents up to 30A (8/20μs) and can dissipate the energy of an ESD event without damage. The device's internal protection circuitry is designed to clamp the voltage and limit the current during an ESD event, protecting the downstream IC from damage.
  • The maximum operating temperature range for the ESD5401N-2/TR is -40°C to 125°C. However, it's recommended to operate the device within the specified temperature range to ensure optimal performance and reliability.
  • Yes, the ESD5401N-2/TR is suitable for high-frequency applications up to 6 GHz. The device's low capacitance (0.4pF) and low inductance make it suitable for high-speed interfaces such as USB, HDMI, and Ethernet.
  • The ESD5401N-2/TR is designed to have minimal impact on signal integrity. The device's low capacitance and low inductance ensure that the signal is not distorted or attenuated, and the device's high bandwidth (6 GHz) ensures that high-frequency signals are not affected.

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ESD5401N-2/TR Overview

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