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ESD7181MUT5G - onsemi

Description: Low Capacitance 0.3pF (typical); Low Clamping Voltage; Small Body Outline Dimensions: (0.62mm x 0.32mm); Low Body Height: (0.3mm); Working Voltage (+/-18.5V); Low Leakage <1nA (typical); Low Insertion Loss (-0.335dB at 8.5GHz); Low Dynamic Resistance: <1ohm; IEC61000-4-2 Level 4 ESD Protection; Pb-Free, Halogen Free / BFR Free and are RoHS Compliant

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PCB Footprints
ESD7181MUT5G - onsemi PCB footprint - Other - Other - X3DFN2 CASE 152AF ISSUE A
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ESD7181MUT5G - onsemi  - 3D model - Other - X3DFN2 CASE 152AF ISSUE A
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ESD7181MUT5G Details

  • Manufacturer Part Number:

    ESD7181MUT5G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    X3DFN2, 0.62x0.32, 0.355P, (0201)

  • Package Description:

    X3DFN2, 2 PIN

  • Pin Count:

    2

  • Manufacturer Package Code:

    152AF

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Factory Lead Time:

    7 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7.06

  • Additional Feature:

    EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

  • Breakdown Voltage-Max:

    35 V

  • Breakdown Voltage-Min:

    20.5 V

  • Breakdown Voltage-Nom:

    20.5 V

  • Clamping Voltage-Max:

    41.1 V

  • Configuration:

    SINGLE, 1 CHANNEL

  • Diode Capacitance-Min:

    0.1 pF

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • JESD-30 Code:

    R-PBCC-N2

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Peak Reflow Temperature (Cel):

    260

  • Polarity:

    BIDIRECTIONAL

  • Power Dissipation-Max:

    0.25 W

  • Reference Standard:

    IEC-61000-4-2, 4-5

  • Rep Pk Reverse Voltage-Max:

    18.5 V

  • Reverse Current-Max:

    0.05 µA

  • Reverse Test Voltage:

    18.5 V

  • Surface Mount:

    YES

  • Technology:

    AVALANCHE

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

ESD7181MUT5G Frequently Asked Questions (FAQs)

  • A good PCB layout for ESD7181MUT5G involves keeping the input and output traces short and away from each other, using a solid ground plane, and placing the device close to the protected circuit. Additionally, it's recommended to use a common ground point for the device and the protected circuit.
  • The ESD7181MUT5G is designed to handle surge pulses according to IEC 61000-4-5. It can withstand surge pulses up to 4 kV, and it clamps the voltage to a safe level to protect the downstream circuitry.
  • The ESD7181MUT5G can operate safely in the temperature range of -40°C to 125°C. However, the device's performance may degrade at extreme temperatures, and it's recommended to operate it within the recommended temperature range for optimal performance.
  • Yes, you can use multiple ESD7181MUT5G devices in parallel to increase the current handling capability. However, it's essential to ensure that the devices are properly synchronized and that the PCB layout is designed to minimize parasitic inductance and resistance.
  • The typical response time of ESD7181MUT5G to an ESD event is around 1-2 nanoseconds. This fast response time helps to protect the downstream circuitry from ESD damage.

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ESD7181MUT5G Overview

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