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ESDHSBULC3V3LB-TP - MCC

Description: Snap Back ESD Protection Device , DFN1006-2 , IPP :26A , PPK : 260W , TSTG : -55°C to +150°C

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ESDHSBULC3V3LB-TP - MCC PCB footprint - Other - Other - ESDHSBULC3V3LB-TP
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ESDHSBULC3V3LB-TP - MCC  - 3D model - Other - ESDHSBULC3V3LB-TP
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ESDHSBULC3V3LB-TP Details

  • Manufacturer Part Number:

    ESDHSBULC3V3LB-TP

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DFN1006-2, 2 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Manufacturer:

    Micro Commercial Components

  • YTEOL:

    6

  • Breakdown Voltage-Min:

    5 V

  • Clamping Voltage-Max:

    10 V

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • JESD-30 Code:

    R-PBCC-N2

  • Non-rep Peak Rev Power Dis-Max:

    260 W

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Polarity:

    BIDIRECTIONAL

  • Reference Standard:

    IEC-61000-4-2, 4-5

  • Rep Pk Reverse Voltage-Max:

    3.3 V

  • Reverse Current-Max:

    0.5 µA

  • Reverse Test Voltage:

    3.3 V

  • Surface Mount:

    YES

  • Technology:

    AVALANCHE

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

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ESDHSBULC3V3LB-TP Overview

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