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ESDM1131MX4T5G - onsemi

Description: Small Body Outline Dimensions 01005 Size: 0.445x0.240mm; Protection for the following IEC Standards: IEC61000-4-2 (Level 4); Low ESD Clamping Voltage; PB-free, Halogen free / BFR free and are RoHS Compliant; Low Capacitance (4.0pF Max, I/O to GND)

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PCB Footprints
ESDM1131MX4T5G - onsemi PCB footprint - Other - Other - X4DFN2, 0.445x0.24, 0.27P CASE 718AA ISSUE A
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ESDM1131MX4T5G - onsemi  - 3D model - Other - X4DFN2, 0.445x0.24, 0.27P CASE 718AA ISSUE A
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ESDM1131MX4T5G Details

  • Manufacturer Part Number:

    ESDM1131MX4T5G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    X4DFN-2

  • Manufacturer Package Code:

    718AA

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Breakdown Voltage-Max:

    6 V

  • Breakdown Voltage-Min:

    4 V

  • Breakdown Voltage-Nom:

    5 V

  • Clamping Voltage-Max:

    7 V

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • JESD-30 Code:

    R-PBCC-N2

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Peak Reflow Temperature (Cel):

    260

  • Polarity:

    BIDIRECTIONAL

  • Reference Standard:

    IEC-61000-4-2

  • Rep Pk Reverse Voltage-Max:

    3.3 V

  • Reverse Current-Max:

    0.1 µA

  • Reverse Test Voltage:

    3.3 V

  • Surface Mount:

    YES

  • Technology:

    AVALANCHE

  • Terminal Finish:

    Tin/Copper/Silver (Sn/Cu/Ag)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

ESDM1131MX4T5G Frequently Asked Questions (FAQs)

  • A good PCB layout for ESDM1131MX4T5G involves keeping the device close to the protected line, using short traces, and minimizing the distance between the device and the connector. A ground plane underneath the device can also help to reduce noise and improve performance.
  • The voltage rating of ESDM1131MX4T5G should be chosen based on the maximum voltage that the protected line can reach. For example, if the protected line can reach up to 3.3V, a 3.3V-rated device should be chosen. It's also important to consider the voltage tolerance of the device and the system.
  • The maximum surge current that ESDM1131MX4T5G can handle is 30A, as specified in the datasheet. However, it's important to note that the device can handle higher surge currents for shorter durations, and the actual surge current handling capability may vary depending on the application and environment.
  • Yes, ESDM1131MX4T5G can be used for bidirectional protection. The device has a symmetrical structure that allows it to protect against electrostatic discharges (ESD) in both directions, making it suitable for applications that require bidirectional protection.
  • ESDM1131MX4T5G has a relatively low capacitance of 0.35pF, which makes it suitable for high-speed interfaces and applications where signal integrity is critical. Compared to other ESD protection devices, ESDM1131MX4T5G has a lower capacitance, which can help to minimize signal distortion and attenuation.

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