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FCH072N60F - onsemi

Description: Typ. RDS(on) = 65 mΩ; 650 V @ TJ= 150°C; Low Effective Output Capacitance (Typ. Coss(eff.) = 441 pF); RoHS Compliant Compliant; Ultra Low Gate Charge (Typ. Qg= 165 nC); 100% Avalanche Tested

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FCH072N60F - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−247−3LD SHORT LEAD CASE 340CK ISSUE A
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FCH072N60F - onsemi  - 3D model - Transistor Outline, Vertical - TO−247−3LD SHORT LEAD CASE 340CK ISSUE A
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FCH072N60F Details

  • Manufacturer Part Number:

    FCH072N60F

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-3

  • Package Description:

    ROHS COMPLIANT, PLASTIC PACKAGE-3

  • Manufacturer Package Code:

    340CK

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    1128 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    52 A

  • Drain-source On Resistance-Max:

    0.072 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    481 W

  • Pulsed Drain Current-Max (IDM):

    156 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FCH072N60F Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the FCH072N60F is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper cooling, it's essential to provide a good thermal path from the device to a heat sink or a heat spreader. Use a thermal interface material (TIM) to fill any gaps between the device and the heat sink, and ensure the heat sink is properly mounted and secured.
  • The recommended gate drive voltage for the FCH072N60F is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. It's essential to consult the datasheet and application notes for more information.
  • Yes, the FCH072N60F can be used in a parallel configuration to increase the current handling capability. However, it's crucial to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing.
  • The maximum allowable voltage transient for the FCH072N60F is specified in the datasheet as 80V. However, it's recommended to limit the voltage transient to 60V or less to ensure the device operates within its safe operating area.

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FCH072N60F Overview

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