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FCH077N65F-F155 - onsemi

Description: N-Channel 650 V 54A (Tc) 481W (Tc) Through Hole TO-247-3

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FCH077N65F-F155 Details

  • Manufacturer Part Number:

    FCH077N65F-F155

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247 3L

  • Package Description:

    ROHS COMPLIANT, PLASTIC, TO-247G03, 3 PIN

  • Manufacturer Package Code:

    340CH

  • Reach Compliance Code:

    Not Compliant

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    1128 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    54 A

  • Drain-source On Resistance-Max:

    0.077 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    481 W

  • Pulsed Drain Current-Max (IDM):

    162 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FCH077N65F-F155 Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the FCH077N65F-F155 is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper cooling, it's essential to provide a good thermal path from the device to a heat sink or a heat spreader. Use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K, and ensure the heat sink is properly mounted and secured.
  • The recommended gate drive voltage for the FCH077N65F-F155 is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency.
  • Yes, the FCH077N65F-F155 is suitable for high-reliability applications. It's manufactured using a robust process and has undergone rigorous testing to ensure its reliability. However, it's essential to follow proper design and manufacturing guidelines to ensure the device operates within its specified parameters.
  • To protect the FCH077N65F-F155 from ESD, handle the device by the body or use an anti-static wrist strap. Ensure the workspace and equipment are grounded, and use ESD-protective packaging and materials during storage and transportation.

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FCH077N65F-F155 Overview

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Part Image FCH077N65F_F155 onsemi

N-Channel SuperFET® II FRFET® MOSFET, TO-247 3L, 3600-RAIL