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FCH190N65F_F155 - onsemi

Description: FCH190N65F_F155 N-Channel MOSFET, 20 A, 650 V SuperFET II, 3-Pin TO-247 ON Semiconductor

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FCH190N65F_F155 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - FCH190N65Fs_F155
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FCH190N65F_F155 - onsemi  - 3D model - Transistor Outline, Vertical - FCH190N65Fs_F155
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FCH190N65F_F155 Details

  • Manufacturer Part Number:

    FCH190N65F_F155

  • Brand Name:

    ON Semiconductor

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    FLANGE MOUNT, R-PSFM-T3

  • Manufacturer Package Code:

    TO247G03

  • Reach Compliance Code:

    Compliant

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    2 Days

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    400 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    20.6 A

  • Drain-source On Resistance-Max:

    0.19 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    208 W

  • Pulsed Drain Current-Max (IDM):

    61.8 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FCH190N65F_F155 Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the package, connecting it to a large copper area on the PCB, and using multiple vias to dissipate heat to the other layers. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended thermal design guidelines, use a suitable heat sink, and ensure good airflow around the device. Additionally, derating the device's power handling capability at high temperatures is recommended.
  • The maximum allowed voltage transient on the drain-source pins is typically limited to 100ns, and the voltage should not exceed the maximum rated voltage (Vds) by more than 10%. Exceeding this limit can cause damage to the device.
  • To protect the device from ESD, it's essential to follow proper handling and storage procedures, use ESD-safe materials, and implement ESD protection circuits in the design. The device has an internal ESD protection diode, but external protection is still recommended.
  • The recommended gate drive voltage is typically between 10V to 15V, and the current should be limited to 1A to 2A. A higher gate drive voltage can improve switching performance, but it may also increase power losses.

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