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FCP220N80 - onsemi

Description: ESD Improved Capability; Low Effective Output Capacitance (Typ. Coss(eff.) = 304 pF); 100% Avalanche Tested; Ultra Low Gate Charge (Typ. Qg = 78 nC); Low Eoss (Typ. 7.5 uJ @ 400 V); RoHS Compliant; Typ. RDS(on) = 188 mΩ

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FCP220N80 Details

  • Manufacturer Part Number:

    FCP220N80

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    645 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    23 A

  • Drain-source On Resistance-Max:

    0.22 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    278 W

  • Pulsed Drain Current-Max (IDM):

    57 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    175 ns

  • Turn-on Time-Max (ton):

    112 ns

FCP220N80 Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the FCP220N80 is 150°C. It's essential to ensure that the device does not exceed this temperature to prevent damage or degradation.
  • The thermal resistance of the FCP220N80 can be calculated using the thermal resistance values provided in the datasheet. The junction-to-case thermal resistance (RθJC) is 1.5°C/W, and the case-to-ambient thermal resistance (RθCA) is dependent on the specific heat sink and cooling system used.
  • The recommended gate drive voltage for the FCP220N80 is between 10V and 15V. This ensures proper switching and minimizes the risk of damage to the device.
  • Yes, the FCP220N80 is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to ensure that the device is properly cooled and that the switching frequency does not exceed the maximum recommended value to prevent overheating and damage.
  • To protect the FCP220N80 from overvoltage and overcurrent, it's recommended to use a suitable voltage regulator and overcurrent protection circuitry. Additionally, ensure that the device is operated within its recommended voltage and current ratings to prevent damage.

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FCP220N80 Overview

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