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FCPF600N65S3R0L-F154 - onsemi

Description: 700 V @ TJ= 150 oC; Low Effective Output Capacitance (Typ. Coss(eff.) = 127 pF); Ultra Low Gate Charge (Typ. Qg = 11 nC); Optimized Capacitance; 100% Avalanche Tested; RoHS Compliant; Typ. RDS(on) = 474 mΩ; Internal Gate Resistance: 0.9 Ω

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FCPF600N65S3R0L-F154 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - FCPF600N65S3R0L-F154
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FCPF600N65S3R0L-F154 - onsemi  - 3D model - Transistor Outline, Vertical - FCPF600N65S3R0L-F154
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FCPF600N65S3R0L-F154 Details

  • Manufacturer Part Number:

    FCPF600N65S3R0L-F154

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    TO-220 FULLPACK, 3-LEAD (ULTRA NARROW LEAD)

  • Package Description:

    TO-220F, 3 PIN

  • Manufacturer Package Code:

    221BN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    24 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    0.6 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    24 W

  • Pulsed Drain Current-Max (IDM):

    15 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FCPF600N65S3R0L-F154 Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a minimum of 2 oz copper thickness, a thermal relief pattern under the device, and a solid copper pour on the top and bottom layers. Additionally, it's recommended to use vias to connect the thermal pad to the thermal relief pattern.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended thermal design guidelines, including using a heat sink, ensuring good thermal interface material (TIM) between the device and heat sink, and keeping the junction temperature (Tj) below the maximum rated value of 150°C.
  • The maximum allowed voltage transient on the drain-source voltage (Vds) is 650V, which is the absolute maximum rating. However, it's recommended to limit the voltage transient to 600V or less to ensure reliable operation and prevent damage to the device.
  • To protect the device from electrostatic discharge (ESD), it's recommended to follow proper handling and storage procedures, including using ESD-safe materials, grounding oneself before handling the device, and using ESD protection devices such as TVS diodes or ESD suppressors.
  • The recommended gate drive voltage is 10-15V, and the recommended gate drive current is 1-2A. However, the actual gate drive voltage and current may vary depending on the specific application and requirements.

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FCPF600N65S3R0L-F154 Overview

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