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FDB075N15A-F085 - onsemi

Description: Typ rDS(on) = 5.5mΩ at VGS = 10V, ID = 80A ; Typ Qg(tot) = 80nC at VGS = 10V, ID = 80A ; Qualified to AEC Q101 ; UIS Capability ; RoHS Compliant

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FDB075N15A-F085 - onsemi PCB footprint - Other - Other - D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ ISSUE C
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FDB075N15A-F085 - onsemi  - 3D model - Other - D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ ISSUE C
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FDB075N15A-F085 Details

  • Manufacturer Part Number:

    FDB075N15A-F085

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-263 2L (D2PAK)

  • Package Description:

    ROHS COMPLIANT, TO-263, D2PAK-3/2

  • Manufacturer Package Code:

    418AJ

  • Reach Compliance Code:

    Not Compliant

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    502 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    110 A

  • Drain-source On Resistance-Max:

    0.0075 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    333 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDB075N15A-F085 Frequently Asked Questions (FAQs)

  • The maximum SOA for the FDB075N15A-F085 is typically defined by the device's voltage and current ratings. For this device, the maximum voltage rating is 150V and the maximum current rating is 75A. Operating the device within these ratings ensures safe operation.
  • Proper cooling is crucial for the FDB075N15A-F085. Ensure good thermal contact between the device and a heat sink, and use a thermal interface material (TIM) to fill any gaps. A heat sink with a thermal resistance of 1°C/W or lower is recommended. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate drive voltage for the FDB075N15A-F085 is between 10V and 15V. A higher gate drive voltage can reduce switching losses, but may also increase gate charge and reduce reliability. A lower gate drive voltage can reduce gate charge, but may increase switching losses.
  • To protect the FDB075N15A-F085 from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) to limit voltage spikes. Additionally, use a current sense resistor and a current limiter or a fuse to detect and respond to overcurrent conditions.
  • For the FDB075N15A-F085, use a PCB layout that minimizes parasitic inductance and capacitance. Keep the gate drive traces short and wide, and use a ground plane to reduce electromagnetic interference (EMI). Place the device close to the heat sink and ensure good thermal contact.

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FDB075N15A-F085 Overview

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Part Image FDB075N15A_F085 onsemi

150V, 110A, 5.5mΩ, D2PAK N-Channel PowerTrench®, TO-263 2L (D2PAK), 800-TAPE REEL