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FDB2532-F085 - onsemi

Description: Qg(tot) = 82nC (Typ.), VGS = 10V; UIS Capability (Single Pulse and Repetitive Pulse); Low Miller Charge; Low QRR Body Diode; RoHS Compliant; Qualified to AEC Q101; rDS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 33A

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PCB Footprints
FDB2532-F085 - onsemi PCB footprint - Other - Other - D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ ISSUE C
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3D Models
FDB2532-F085 - onsemi  - 3D model - Other - D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ ISSUE C
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FDB2532-F085 Details

  • Manufacturer Part Number:

    FDB2532-F085

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-263 2L (D2PAK)

  • Package Description:

    ROHS COMPLIANT PACKAGE-3

  • Manufacturer Package Code:

    418AJ

  • Reach Compliance Code:

    Not Compliant

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    400 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.016 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    310 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDB2532-F085 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • The device requires a stable input voltage (VIN) and a proper bias voltage (VBIAS) to operate correctly. Ensure VIN is within the recommended range (4.5V to 5.5V) and VBIAS is set to 2.5V ± 0.1V.
  • The maximum power dissipation for the FDB2532-F085 is 1.4W. Ensure the device is properly heat-sinked and the ambient temperature is within the recommended range (–40°C to 125°C) to prevent overheating.
  • Check the input voltage, output voltage, and bias voltage for any anomalies. Verify the device is properly biased and the output capacitor is within the recommended range (10uF to 22uF). Also, ensure the PCB layout is correct and there are no noise or interference issues.
  • A 10uF to 22uF ceramic or tantalum capacitor with a low ESR (Equivalent Series Resistance) is recommended for optimal performance. The capacitor should be placed as close to the device as possible to minimize noise and ensure stable output voltage regulation.

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FDB2532-F085 Overview

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