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FDD9409L-F085 - onsemi

Description: UIS Capability ; Typical Qg(tot) = 52 nC at VGS = 10V, ID = 80 A ; RoHS Compliant ; Qualified to AEC Q101 ; Typical RDS(on) = 2.1 mΏ at VGS = 10V, ID = 80 A

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FDD9409L-F085 - onsemi PCB footprint - Other - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_1
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FDD9409L-F085 - onsemi  - 3D model - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O_1
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FDD9409L-F085 Details

  • Manufacturer Part Number:

    FDD9409L-F085

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-252 3L (DPAK)

  • Package Description:

    DPAK-3/2

  • Manufacturer Package Code:

    369AS

  • Reach Compliance Code:

    Not Compliant

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    33.7 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain-source On Resistance-Max:

    0.0044 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    150 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    70 ns

  • Turn-on Time-Max (ton):

    47 ns

FDD9409L-F085 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias under the device can help to dissipate heat efficiently. The datasheet provides a recommended PCB layout, but it's essential to consult with a thermal expert or perform thermal simulations to ensure optimal performance.
  • The FDD9409L-F085 requires a specific biasing scheme to operate within its recommended operating conditions. Ensure that the gate-source voltage (Vgs) is within the recommended range (typically -2V to 2V) and the drain-source voltage (Vds) is within the recommended range (typically 10V to 30V). Consult the datasheet and application notes for specific biasing requirements.
  • Monitor the device's junction temperature (Tj), drain-source voltage (Vds), and drain current (Id) to prevent overheating, overvoltage, and overcurrent conditions. Implement thermal monitoring and protection circuits to prevent device failure.
  • The FDD9409L-F085 has built-in ESD protection, but it's still essential to follow proper ESD handling procedures during assembly and testing. Use ESD-safe materials, wrist straps, and mats to prevent static damage. Ensure that the device is properly grounded during handling and testing.
  • Store the devices in their original packaging or in a dry, ESD-safe environment. Avoid exposing the devices to moisture, extreme temperatures, or physical stress. Handle the devices by the body or leads, avoiding touching the die or wire bonds.

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FDD9409L-F085 Overview

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