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FDMC86160 - onsemi

Description: Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A ; Shielded Gate MOSFET Technology ; Max rDS(on) = 14 mΩ at VGS = 10 V, ID = 9 A ; Termination is Lead-free and RoHS Compliant ; High performance technology for extremely low rDS(on)

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PCB Footprints
FDMC86160 - onsemi PCB footprint - Other - Other - WDFN8 3.3X3.3, 0.65P CASE 483AW ISSUE A_1
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3D Models
FDMC86160 - onsemi  - 3D model - Other - WDFN8 3.3X3.3, 0.65P CASE 483AW ISSUE A_1
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FDMC86160 Details

  • Manufacturer Part Number:

    FDMC86160

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PQFN-8

  • Package Description:

    ROHS COMPLIANT, POWER 33, 8 PIN

  • Manufacturer Package Code:

    483AW

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.85

  • Avalanche Energy Rating (Eas):

    181 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    9 A

  • Drain-source On Resistance-Max:

    0.014 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MO-240BA

  • JESD-30 Code:

    S-PDSO-N5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    54 W

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDMC86160 Frequently Asked Questions (FAQs)

  • A good PCB layout for the FDMC86160 involves keeping the high-frequency signals away from the low-frequency signals, using a solid ground plane, and minimizing the length of the traces. A 4-layer PCB with a dedicated power plane and a dedicated ground plane is recommended.
  • To optimize the FDMC86160 for low power consumption, use the lowest possible supply voltage, reduce the clock frequency, and use the power-down mode when not in use. Additionally, use a low-power mode for the oscillator and reduce the current consumption of the internal regulators.
  • The maximum operating temperature range for the FDMC86160 is -40°C to 125°C. However, the device can operate at a reduced temperature range of -20°C to 85°C for automotive applications.
  • To ensure EMC with the FDMC86160, use a shielded enclosure, keep the PCB layout compact, use a common-mode choke, and add EMI filters to the input and output lines. Additionally, use a low-pass filter to reduce electromagnetic radiation.
  • The recommended input voltage range for the FDMC86160 is 4.5V to 18V. However, the device can operate with an input voltage as low as 4V, but with reduced performance.

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FDMC86160 Overview

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