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FDMC86160ET100 - onsemi

Description: Extended TJ rating to 175°C; Max rDS(on) = 14 mΩ at VGS = 10 V, ID = 9 A ; Termination is Lead-free and RoHS Compliant; Shielded Gate MOSFET Technology ; High performance technology for extremely low rDS(on) ; Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A

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FDMC86160ET100 - onsemi  - 3D model
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FDMC86160ET100 Details

  • Manufacturer Part Number:

    FDMC86160ET100

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PQFN-8

  • Package Description:

    WDFN-8

  • Manufacturer Package Code:

    483AW

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.85

  • Additional Feature:

    ULTRA LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    181 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    9 A

  • Drain-source On Resistance-Max:

    0.014 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    20 pF

  • JEDEC-95 Code:

    MO-240BA

  • JESD-30 Code:

    S-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    65 W

  • Pulsed Drain Current-Max (IDM):

    204 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    40 ns

  • Turn-on Time-Max (ton):

    29 ns

FDMC86160ET100 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a heat sink or a thermal pad to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout guidelines. Also, consider using a thermocouple or thermistor to monitor the device temperature.
  • The maximum allowed voltage on the input pins is 5.5V, which is the absolute maximum rating. However, it's recommended to keep the input voltage below 5V to ensure reliable operation.
  • Yes, the FDMC86160ET100 is AEC-Q100 qualified and suitable for high-reliability and automotive applications. However, ensure that you follow the recommended design and testing guidelines for these applications.
  • Use a logic analyzer or oscilloscope to monitor the device's input and output signals. Check the power supply voltage, input signal integrity, and PCB layout for any issues. Consult the datasheet and application notes for troubleshooting guidelines.

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FDMC86160ET100 Overview

Use the download button to access the FDMC86160ET100 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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