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FDMC86240 - onsemi

Description: Max rDS(on) = 51 mΩ at VGS = 10 V, ID = 4.6 A ; Low Profile - 1 mm max in Power 33 ; Shielded Gate MOSFET Technology; RoHS Compliant ; 100% UIL Tested ; Max rDS(on) = 70 mΩ at VGS = 6 V, ID = 3.9 A

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PCB Footprints
FDMC86240 - onsemi PCB footprint - Other - Other - WDFN8 3.3x3.3, 0.65P CASE 511DH ISSUE O
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3D Models
FDMC86240 - onsemi  - 3D model - Other - WDFN8 3.3x3.3, 0.65P CASE 511DH ISSUE O
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FDMC86240 Details

  • Manufacturer Part Number:

    FDMC86240

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    WDFN-8

  • Package Description:

    3.30 X 3.30 MM, ROHS COMPLIANT, POWER 33, MLP, 8 PIN

  • Manufacturer Package Code:

    511DH

  • Country Of Origin:

    Thailand

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    34 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    4.6 A

  • Drain-source On Resistance-Max:

    0.051 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    10 pF

  • JESD-30 Code:

    S-PDSO-N8

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    40 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    36 ns

  • Turn-on Time-Max (ton):

    27 ns

FDMC86240 Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure that the device is operated within the recommended voltage and current limits, and that the PCB is designed to minimize thermal resistance. Also, consider using a thermal interface material (TIM) to improve heat transfer.
  • The critical timing parameters include the input rise and fall times, output delay, and propagation delay. These parameters are critical for ensuring reliable operation and should be carefully considered during design.
  • Use ESD protection devices such as TVS diodes or ESD arrays on the input and output pins to protect the device from electrostatic discharge. Also, ensure that the PCB is designed with ESD protection in mind, including the use of ESD-safe components and connectors.
  • Use a high-speed oscilloscope and a signal generator to test the device's performance. Measure the device's output waveform, rise and fall times, and propagation delay to ensure it meets the datasheet specifications.

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FDMC86240 Overview

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