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FDMT800120DC - onsemi

Description: Max rDS(on) = 4.14 mΩ at VGS = 10 V, ID = 20 A ; RoHS Compliant ; Low profile 8x8mm MLP packag ; Next generation enhanced body diode technology, engineered for soft recovery ; 100% UIL tested ; Advanced Package and Silicon combination for low rDS(on) and high efficiency ; MSL1 robust package design ; Max rDS(on) = 6.0 mΩ at VGS = 6 V, ID = 16 A

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PCB Footprints
FDMT800120DC - onsemi PCB footprint - Other - Other - FDMT800120DC-1
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FDMT800120DC - onsemi  - 3D model - Other - FDMT800120DC-1
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FDMT800120DC Details

  • Manufacturer Part Number:

    FDMT800120DC

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DFNW-8

  • Manufacturer Package Code:

    507AR

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.2

  • Avalanche Energy Rating (Eas):

    1350 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    120 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.0042 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    40 pF

  • JESD-30 Code:

    S-PDSO-N3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    156 W

  • Pulsed Drain Current-Max (IDM):

    767 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    83 ns

  • Turn-on Time-Max (ton):

    80 ns

FDMT800120DC Frequently Asked Questions (FAQs)

  • A 2-layer PCB with a solid ground plane on the bottom layer and a thermal relief pattern on the top layer is recommended. This helps to dissipate heat efficiently and reduces thermal resistance.
  • Ensure that the device is operated within the recommended temperature range (TJ = -40°C to 150°C). Use a heat sink if necessary, and ensure good airflow around the device. Also, follow the recommended derating guidelines for power dissipation.
  • The maximum allowable voltage stress on the device is 1200V. Exceeding this voltage may cause permanent damage to the device.
  • Use a transient voltage suppressor (TVS) or a metal-oxide varistor (MOV) to protect the device from EOS. Ensure that the protection device is rated for the maximum voltage and current of the application.
  • A soldering profile with a peak temperature of 260°C and a dwell time of 10-30 seconds is recommended. Ensure that the device is not exposed to temperatures above 260°C for an extended period.

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FDMT800120DC Overview

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