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FDMT80040DC - onsemi

Description: MSL1 Robust Package Design ; Max rDS(on) = 0.9 mΩ at VGS = 6 V, ID = 47 A ; Low Profile 8x8mm MLP Package ; Next Generation Enhanced Body Diode Technology, Engineered for Soft Recovery ; 100% UIL Tested ; Advanced Package and Silicon Combination for Low rDS(on)and High Efficiency ; RoHS Compliant ; Max rDS(on) = 0.56 mΩ at VGS = 10 V, ID = 64 A

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PCB Footprints
FDMT80040DC - onsemi PCB footprint - Other - Other - TDFNW8 8.30x8.40x0.92, 2.00P CASE 507AR ISSUE C
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3D Models
FDMT80040DC - onsemi  - 3D model - Other - TDFNW8 8.30x8.40x0.92, 2.00P CASE 507AR ISSUE C
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FDMT80040DC Details

  • Manufacturer Part Number:

    FDMT80040DC

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DFNW-8

  • Manufacturer Package Code:

    507AR

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    2773 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    420 A

  • Drain-source On Resistance-Max:

    0.00056 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    1210 pF

  • JESD-30 Code:

    S-PDSO-N3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    156 W

  • Pulsed Drain Current-Max (IDM):

    2644 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    231 ns

  • Turn-on Time-Max (ton):

    201 ns

FDMT80040DC Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material (TIM) between the device and heat sink, and follow the recommended PCB layout guidelines. Also, consider derating the device's power handling at high temperatures.
  • The maximum allowable voltage on the gate pin is ±20V, but it's recommended to keep it within ±15V to ensure reliable operation and prevent damage to the device.
  • Yes, the FDMT80040DC is suitable for high-frequency switching applications up to 100 kHz. However, ensure proper PCB layout, decoupling, and snubber circuits to minimize ringing and EMI.
  • Use a voltage regulator or a TVS diode to protect against overvoltage. For overcurrent protection, use a fuse or a current-sensing resistor with a comparator and a shutdown circuit.

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FDMT80040DC Overview

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