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FDMT80080DC - onsemi

Description: Max rDS(on) = 1.35 mΩ at VGS = 10 V, ID = 36 A ; MSL1 robust package design ; Advanced Package and Silicon combination for low rDS(on) and high efficiency ; Next generation enhanced body diode technology, engineered for soft recovery ; 100% UIL tested ; Low profile 8x8mm MLP package ; Max rDS(on) = 1.82 mΩ at VGS = 8 V, ID = 31 A ; RoHS Compliant

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PCB Footprints
FDMT80080DC - onsemi PCB footprint - Other - Other - PQFN8 8X8, 2P CASE 483AQ ISSUE O
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3D Models
FDMT80080DC - onsemi  - 3D model - Other - PQFN8 8X8, 2P CASE 483AQ ISSUE O
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FDMT80080DC Details

  • Manufacturer Part Number:

    FDMT80080DC

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    PQFN-8

  • Manufacturer Package Code:

    483AQ

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    1734 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    254 A

  • Drain-source On Resistance-Max:

    0.00135 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    125 pF

  • JESD-30 Code:

    S-PDSO-N3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    156 W

  • Pulsed Drain Current-Max (IDM):

    1453 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    168 ns

  • Turn-on Time-Max (ton):

    212 ns

FDMT80080DC Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • Ensure proper heat sinking, use a thermal interface material (TIM) between the device and heat sink, and follow the recommended PCB layout guidelines. Also, consider using a thermistor or thermal sensor to monitor the device temperature.
  • The maximum allowed voltage on the input pins is 5.5V, which is the absolute maximum rating. However, it's recommended to keep the input voltage below 5V to ensure reliable operation and minimize power consumption.
  • Yes, the FDMT80080DC is AEC-Q101 qualified, which makes it suitable for automotive and high-reliability applications. However, ensure that you follow the recommended design and testing guidelines for these applications.
  • The FDMT80080DC has built-in ESD protection, but it's still recommended to follow proper ESD handling procedures during manufacturing and assembly. Use ESD-safe materials, and ensure that the device is handled and stored in an ESD-protected environment.

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FDMT80080DC Overview

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