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FDP2552 - onsemi

Description: Low Qrr Body Diode; QG(tot) = 39nC (Typ.) @ VGS = 10V; RDS(on) = 32mΩ (Typ.) @ VGS = 10V, ID = 16A; UIS Capability (Single Pulse and Repetitive Pulse); Low Miller Charge

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PCB Footprints
FDP2552 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220−3LD CASE 340AT ISSUE A
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3D Models
FDP2552 - onsemi  - 3D model - Transistor Outline, Vertical - TO−220−3LD CASE 340AT ISSUE A
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FDP2552 Details

  • Manufacturer Part Number:

    FDP2552

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220AB, 3 PIN

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.92

  • Avalanche Energy Rating (Eas):

    390 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    5 A

  • Drain-source On Resistance-Max:

    0.036 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    150 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDP2552 Frequently Asked Questions (FAQs)

  • A good PCB layout for the FDP2552 involves keeping the high-current paths short and wide, using a solid ground plane, and placing the device close to the power source. Additionally, it's recommended to use a shielded inductor and to keep the switching node (SW) away from sensitive analog circuits.
  • To optimize the FDP2552 for low standby power consumption, ensure that the EN pin is properly biased to disable the device during standby mode. Also, minimize the voltage on the VIN pin and use a low-quiescent-current voltage regulator for the VCC pin. Finally, consider using a low-power mode or shutdown mode if available.
  • The FDP2552 has a thermal junction-to-ambient thermal resistance of 30°C/W. To prevent overheating, ensure good airflow around the device, use a heat sink if necessary, and avoid operating the device at maximum power for extended periods. Monitor the device temperature and reduce the power output if it exceeds 125°C.
  • To troubleshoot issues with the FDP2552, start by verifying the input voltage and current, and checking the output voltage and current. Check for proper PCB layout, component selection, and soldering. Use an oscilloscope to inspect the switching node (SW) and output voltage waveforms. Consult the datasheet and application notes for guidance on specific troubleshooting steps.
  • The FDP2552 has built-in ESD protection, but it's still important to follow proper ESD handling procedures during manufacturing and assembly. Use ESD-safe materials and tools, and ensure that the device is properly grounded during handling. Avoid touching the device pins or exposing them to static electricity.

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FDP2552 Overview

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Part Image FDP2552_NL Rochester Electronics LLC

5A, 150V, 0.036ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN

Part Image FDP2552 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 5A I(D), 150V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB