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FDP4D5N10C - onsemi

Description: Max RDS(on) = 4.5 mΩ at VGS = 10 V, ID = 128 A; High Performance Trench Technology for Extremely Low RDS(on); Extremely Low Reverse Recovery Charge, Qrr; Low Gate Charge, QG = 48nC ( Typ.); High Power and Current Handling Capability; 100% UIL Tested; RoHS Compliant

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PCB Footprints
FDP4D5N10C - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220 CASE 221A ISSUE AK
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FDP4D5N10C - onsemi  - 3D model - Transistor Outline, Vertical - TO−220 CASE 221A ISSUE AK
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FDP4D5N10C Details

  • Manufacturer Part Number:

    FDP4D5N10C

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220, 3 PIN

  • Manufacturer Package Code:

    221A

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    onsemi

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    486 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    91 A

  • Drain-source On Resistance-Max:

    0.0045 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    35 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Packing Method:

    TUBE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    2.4 W

  • Power Dissipation-Max (Abs):

    150 W

  • Pulsed Drain Current-Max (IDM):

    512 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    90 ns

  • Turn-on Time-Max (ton):

    126 ns

FDP4D5N10C Frequently Asked Questions (FAQs)

  • A good PCB layout for FDP4D5N10C should include a solid copper pour on the top and bottom layers, with multiple vias connecting them to dissipate heat. The device should be placed near a thermal pad or heat sink, and the PCB should have a sufficient number of thermal relief holes.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, provide adequate heat sinking, and ensure good airflow around the device. Additionally, consider using a thermal interface material (TIM) between the device and heat sink to improve thermal conductivity.
  • Although the datasheet doesn't explicitly state the maximum allowed voltage on the gate pin, it's generally recommended to keep the gate voltage between -5V and +20V to prevent damage to the device.
  • Yes, FDP4D5N10C can be used in high-frequency switching applications, but it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the application's switching frequency is within the device's recommended operating range.
  • To protect FDP4D5N10C from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the PCB has adequate ESD protection, such as TVS diodes or ESD protection arrays, on the input and output pins.

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FDP4D5N10C Overview

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