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FDP8441 - onsemi

Description: RDS(on) = 2.1mΩ (Typ.) @ VGS = 10V, ID = 80A; Low Qrr Body Diode; Low Miller Charge; QG(tot) = 215nC (Typ.) @ VGS = 10V; Qualified to AEC Q101RoHS Compliant; UIS Capability (Single Pulse and Repetitive Pulse)

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PCB Footprints
FDP8441 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB
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3D Models
FDP8441 - onsemi  - 3D model - Transistor Outline, Vertical - TO-220AB
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FDP8441 Details

  • Manufacturer Part Number:

    FDP8441

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3

  • Package Description:

    ROHS COMPLIANT PACKAGE-3

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    947 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    23 A

  • Drain-source On Resistance-Max:

    0.0027 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    300 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDP8441 Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves placing a thermal pad on the bottom of the package, using a minimum of 2oz copper thickness, and ensuring good thermal conduction to the surrounding PCB area. A thermal via array can also be used to improve heat dissipation.
  • To ensure stable operation with a high-impedance output load, it is recommended to add a small capacitor (e.g., 10nF) in parallel with the output resistor to improve stability and reduce oscillations. Additionally, the output stage can be optimized by adjusting the output resistor value and the feedback network.
  • The maximum allowed voltage on the enable pin (EN) is 6V, which is the absolute maximum rating. However, it is recommended to keep the EN voltage below 5.5V to ensure reliable operation and prevent damage to the device.
  • Yes, the FDP8441 can be used as a high-side switch, but it requires an external charge pump or bootstrap circuit to generate the necessary gate drive voltage. The device's internal charge pump is only suitable for low-side switching applications.
  • The FDP8441 requires a specific power sequencing to ensure proper operation. The recommended power sequencing is to apply the input voltage (VIN) before the enable signal (EN), and to remove the enable signal before removing the input voltage. This ensures that the device is properly biased and avoids unwanted turn-on or turn-off behavior.

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FDP8441 Overview

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