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FDP86363-F085 - onsemi

Description: Typical Qg(tot) = 131 nC at VGS = 10V, ID = 80 A ; RoHS Compliant ; UIS Capability ; Qualified to AEC Q101 ; Typical RDS(on) = 2.4 m? at VGS = 10V, ID = 80 A

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FDP86363-F085 Details

  • Manufacturer Part Number:

    FDP86363-F085

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220 3L

  • Package Description:

    ROHS COMPLIANT PACKAGE-3

  • Manufacturer Package Code:

    340AT

  • Reach Compliance Code:

    Not Compliant

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    512 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    110 A

  • Drain-source On Resistance-Max:

    0.0028 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    95 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    300 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    135 ns

  • Turn-on Time-Max (ton):

    231 ns

FDP86363-F085 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Monitor junction temperature and adjust the system design accordingly.
  • Monitor the device's junction temperature, drain-source voltage, and current. Implement over-temperature, over-voltage, and over-current protection mechanisms to prevent damage.
  • Use a dedicated gate driver IC with a high current capability and a low output impedance. Ensure a short gate resistance and a low inductance layout to minimize switching losses.
  • Implement ESD protection diodes at the input and output pins, and consider adding a TVS (Transient Voltage Suppressor) device for additional protection. Follow proper PCB layout and handling practices to minimize ESD risks.

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FDP86363-F085 Overview

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Part Image FDP86363_F085 onsemi

80V, 110A, 2.4 mΩ, TO-220 N-Channel PowerTrench®, TO-220 3L, 800-RAIL