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FDPF12N50UT - onsemi

Description: Last Shipments - Power MOSFET, N-Channel, UniFETTM, FRFET, 500 V, 12 A, 540 mΩ, TO-220F

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FDPF12N50UT - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220F 3L
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3D Models
FDPF12N50UT - onsemi  - 3D model - Transistor Outline, Vertical - TO-220F 3L
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FDPF12N50UT Details

  • Manufacturer Part Number:

    FDPF12N50UT

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3 FullPak

  • Package Description:

    ROHS COMPLIANT, TO-220F, 3 PIN

  • Manufacturer Package Code:

    221AT

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    456 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    0.8 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    42 W

  • Pulsed Drain Current-Max (IDM):

    40 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDPF12N50UT Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the FDPF12N50UT is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, ensure good thermal contact between the device and heat sink using a thermal interface material, and provide adequate airflow around the heat sink.
  • The recommended gate resistor value for the FDPF12N50UT is between 10Ω and 100Ω. A higher value can help reduce electromagnetic interference (EMI), but may slow down the switching speed.
  • Yes, the FDPF12N50UT is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the gate drive circuitry is designed to handle the high-frequency switching, and consider the effects of parasitic inductance and capacitance on the circuit.
  • To protect the FDPF12N50UT from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, consider using a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions.

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FDPF12N50UT Overview

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