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FDPF5N50NZF - onsemi

Description: Obsolete - Power MOSFET, N-Channel, UniFETTM II, Ultra FRFETTM, 500 V, 3.9 A, 2.0 Ω, TO-220F

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PCB Footprints
FDPF5N50NZF - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220F 3L - TO220, Molded, 3LD
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3D Models
FDPF5N50NZF - onsemi  - 3D model - Transistor Outline, Vertical - TO-220F 3L - TO220, Molded, 3LD
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FDPF5N50NZF Details

  • Manufacturer Part Number:

    FDPF5N50NZF

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3 FullPak

  • Package Description:

    ROHS COMPLIANT, TO-220F, 3 PIN

  • Manufacturer Package Code:

    221AT

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    165 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    4.2 A

  • Drain-source On Resistance-Max:

    1.75 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    30 W

  • Pulsed Drain Current-Max (IDM):

    16 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDPF5N50NZF Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a large copper area for the drain pad, keeping the thermal vias close to the drain pad, and using a thick copper layer (at least 2 oz) to reduce thermal resistance.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, use a suitable heat sink, and ensure good thermal contact between the device and the heat sink. Additionally, consider using a thermal interface material (TIM) to reduce thermal resistance.
  • The maximum allowed voltage transient for FDPF5N50NZF is typically 50% above the maximum rated voltage (Vdss) for a short duration (less than 10 ms). However, it's recommended to consult with onsemi's application engineers for specific guidance on voltage transients.
  • Yes, FDPF5N50NZF is suitable for high-frequency switching applications due to its low gate charge and internal gate resistance. However, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the gate drive circuitry is designed to minimize ringing and oscillations.
  • The recommended gate drive voltage for FDPF5N50NZF is typically between 10 V and 15 V, depending on the specific application requirements. A higher gate drive voltage can reduce switching losses, but may also increase gate charge and oscillations.

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FDPF5N50NZF Overview

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