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FDS4141 - onsemi

Description: RoHS Compliant ; Max rDS(on) = 19.0mΩ at VGS = -4.5V, ID = -8.4A ; Max rDS(on) = 13.0mΩ at VGS = -10V, ID = -10.5A ; High performance trench technology for extremely low rDS(on)

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FDS4141 - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SO 8L NB (SOIC)
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FDS4141 - onsemi  - 3D model - Small Outline Packages - SO 8L NB (SOIC)
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FDS4141 Details

  • Manufacturer Part Number:

    FDS4141

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC-8

  • Package Description:

    SOP-8

  • Manufacturer Package Code:

    751EB

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    294 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    10.8 A

  • Drain-source On Resistance-Max:

    0.013 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    5 W

  • Pulsed Drain Current-Max (IDM):

    36 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDS4141 Frequently Asked Questions (FAQs)

  • The FDS4141 can operate from -40°C to 150°C, making it suitable for high-reliability applications.
  • To ensure proper biasing, connect the gate pin to a voltage source through a 1 kΩ resistor, and the source pin to a voltage source through a 10 kΩ resistor. This will provide a stable operating point.
  • To minimize parasitic inductance, use a compact PCB layout with short, wide traces. Place the FDS4141 close to the power source and use a solid ground plane to reduce inductance.
  • Use ESD protection devices, such as TVS diodes or ESD arrays, on the input and output pins of the FDS4141. Also, follow proper handling and storage procedures to prevent ESD damage.
  • The FDS4141 has a maximum current rating of 4 A, making it suitable for high-current applications.

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FDS4141 Overview

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