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FDS4480 - onsemi

Description: High performance trench technology for extremely low RDS(ON); Low gate charge (29nC); High power and current handling capability; 10.8A, 40V. RDS(ON) = 12mΩ @ VGS = 10V

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FDS4480 - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SO-8-1
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FDS4480 - onsemi  - 3D model - Small Outline Packages - SO-8-1
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FDS4480 Details

  • Manufacturer Part Number:

    FDS4480

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOIC-8

  • Package Description:

    SO-8

  • Manufacturer Package Code:

    751EB

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    240 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    10.8 A

  • Drain-source On Resistance-Max:

    0.012 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.2 W

  • Pulsed Drain Current-Max (IDM):

    45 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDS4480 Frequently Asked Questions (FAQs)

  • The FDS4480 can operate from -40°C to 150°C, making it suitable for high-reliability applications.
  • To ensure proper biasing, connect the VCC pin to a stable 5V power supply, and the VEE pin to a stable -5V power supply. Also, ensure the input voltage (VIN) is within the recommended range of 2.5V to 5.5V.
  • To minimize noise and EMI, use a multi-layer PCB with a solid ground plane, keep the input and output traces short and separate, and use a common-mode choke or ferrite bead on the input lines.
  • The FDS4480 has a built-in current limit of 1.5A and thermal shutdown at 150°C. To handle these features, ensure proper heat sinking, use a current-limiting resistor in series with the output, and monitor the device temperature and output current.
  • Use a 10uF to 22uF ceramic capacitor for the input (VIN) and a 10uF to 47uF ceramic capacitor for the output (VOUT) to ensure stability and low output impedance.

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FDS4480 Overview

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Part Image FDS4480 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 10.8A I(D), 40V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET