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FDS4559 - onsemi

Description: Q2 P-Channel -3.5A, -60V Max. RDS(on) = 105 mΩ at VGS = -10 V, Max. RDS(on) = 135 mΩ at VGS = -4.5 V; Q1 N-Channel 4.5A, 60V Max. RDS(on) = 55 mΩ at VGS = 10 V, Max. RDS(on) = 75 mΩ at VGS = 4.5 V

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PCB Footprints
FDS4559 - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SOIC8 CASE751EB
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FDS4559 - onsemi  - 3D model - Small Outline Packages - SOIC8 CASE751EB
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FDS4559 Details

  • Manufacturer Part Number:

    FDS4559

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC-8

  • Package Description:

    SO-8, 8 PIN

  • Manufacturer Package Code:

    751EB

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.4

  • Avalanche Energy Rating (Eas):

    90 mJ

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    4.5 A

  • Drain-source On Resistance-Max:

    0.055 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL AND P-CHANNEL

  • Power Dissipation-Max (Abs):

    2 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDS4559 Frequently Asked Questions (FAQs)

  • A good PCB layout for the FDS4559 involves keeping the high-current paths short and wide, using a solid ground plane, and placing the input and output capacitors close to the device. Additionally, it's recommended to use a shielded inductor and to keep the switching node (SW) away from sensitive analog circuits.
  • To optimize the FDS4559 for low standby power consumption, ensure that the EN pin is properly biased to turn off the device when not in use. Also, select a low-ESR input capacitor and a high-efficiency inductor to minimize power losses. Furthermore, consider using a low-voltage, low-power mode for the device.
  • The maximum allowed voltage on the VIN pin of the FDS4559 is 28V. Exceeding this voltage may damage the device. It's essential to ensure that the input voltage is within the recommended operating range to ensure reliable operation.
  • To troubleshoot the FDS4559 if it's not switching properly, first check the input voltage and ensure it's within the recommended range. Verify that the EN pin is properly biased and that the device is not overheating. Also, check the output voltage and current to ensure they are within the specified limits. If the issue persists, consult the onsemi application note for further troubleshooting steps.
  • The FDS4559 is rated for operation up to 150°C junction temperature. However, it's essential to ensure that the device is properly heatsinked and that the ambient temperature is within the recommended range. Consult the onsemi datasheet and application notes for more information on thermal management.

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