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FDS4953 - onsemi

Description: TRANS MOSFET P-CH 30V 5A 8SOIC - Bulk

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FDS4953 - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - SOIC 8, 150 mils
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FDS4953 - onsemi  - 3D model - Small Outline Packages - SOIC 8, 150 mils
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FDS4953 Details

  • Manufacturer Part Number:

    FDS4953

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    5 A

  • Drain-source On Resistance-Max:

    0.055 Ω

  • FET Technology:

    TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    70 pF

  • JESD-30 Code:

    R-PDSO-G8

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation Ambient-Max:

    2 W

  • Power Dissipation-Max (Abs):

    2 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    42 ns

  • Turn-on Time-Max (ton):

    38 ns

FDS4953 Frequently Asked Questions (FAQs)

  • The FDS4953 can operate from -40°C to 150°C, making it suitable for automotive and industrial applications.
  • To ensure proper biasing, connect the gate of the FDS4953 to a voltage source through a resistor, and connect the source to a voltage source or ground through a resistor. The recommended biasing voltage is typically between 5V to 15V.
  • The FDS4953 has a maximum current rating of 3.5A, making it suitable for low-power applications such as automotive and industrial control systems.
  • To protect the FDS4953 from ESD, handle the device by the body or use an anti-static wrist strap, and ensure the workspace is ESD-safe. Also, use ESD-protected packaging and storage materials.
  • While the FDS4953 can be used in switching applications, it's not recommended for high-frequency switching (>100 kHz) due to its relatively high gate charge and switching losses. For high-frequency switching, consider using a MOSFET with lower gate charge and switching losses.

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