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FERD20S100SH - STMicroelectronics

Description: STMicroelectronics FERD20S100SH Schottky Rectifier Diode, 100V 20A, 3-Pin IPAK

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FERD20S100SH - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IPAK_
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FERD20S100SH - STMicroelectronics  - 3D model - Transistor Outline, Vertical - IPAK_
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FERD20S100SH Details

  • Manufacturer Part Number:

    FERD20S100SH

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    IPAK-3

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Application:

    EFFICIENCY

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.78 V

  • JESD-30 Code:

    R-PSIP-T3

  • Non-rep Pk Forward Current-Max:

    150 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Rep Pk Reverse Voltage-Max:

    100 V

  • Reverse Current-Max:

    110 µA

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

FERD20S100SH Frequently Asked Questions (FAQs)

  • STMicroelectronics provides a recommended PCB layout in their application note AN5046, which includes guidelines for thermal pad connection, copper pour, and via placement to ensure optimal thermal performance.
  • The power dissipation can be calculated using the formula: Pd = (Vds x Ids) + (Vgs x Igs), where Vds is the drain-source voltage, Ids is the drain-source current, Vgs is the gate-source voltage, and Igs is the gate-source current. Additionally, consider the thermal resistance (Rth) and junction temperature (Tj) to ensure the device operates within the safe operating area.
  • The maximum allowed voltage for Vgs is ±20V, and for Vds, it is 100V. However, it's essential to consider the maximum ratings and safe operating area to prevent device damage or failure.
  • To ensure proper biasing, follow the recommended biasing scheme in the datasheet, which includes setting the gate-source voltage (Vgs) to the recommended value (typically around 10V) and ensuring the drain-source voltage (Vds) is within the specified range. Additionally, consider the output capacitance and inductance to prevent oscillations and ensure stable operation.
  • To prevent electrostatic discharge (ESD) damage, follow proper handling and storage procedures, use ESD-protective packaging, and implement ESD protection circuits, such as TVS diodes or ESD protection arrays, in the design. Additionally, ensure the PCB design includes adequate ESD protection measures, such as guard rings and ESD protection zones.

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FERD20S100SH Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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