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FF11MR12W1M1_B11 - Infineon

Description: EasyDUALmodulewithCoolSiC™TrenchMOSFETandPressFIT/NTC

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FF11MR12W1M1_B11 - Infineon PCB footprint - Other - Other - FF11MR12W1M1_B11-5
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3D Models
FF11MR12W1M1_B11 - Infineon  - 3D model - Other - FF11MR12W1M1_B11-5
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FF11MR12W1M1_B11 Details

  • Manufacturer Part Number:

    FF11MR12W1M1_B11

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    MODULE-9

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Case Connection:

    ISOLATED

  • Configuration:

    SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

  • DS Breakdown Voltage-Min:

    1200 V

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    56 pF

  • JESD-30 Code:

    R-XUFM-X9

  • Number of Elements:

    2

  • Number of Terminals:

    9

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.02 W

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

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FF11MR12W1M1_B11 Overview

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Part Image FF11MR12W1M1B11BOMA1 Infineon Technologies AG

Power Field-Effect Transistor, 100A I(D), 1200V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET