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FFSB20120A - onsemi

Description: Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D1, D2PAK-2L

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FFSB20120A Details

  • Manufacturer Part Number:

    FFSB20120A

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK2 (TO-263-2L)

  • Manufacturer Package Code:

    418BK

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    onsemi

  • YTEOL:

    6.75

  • Additional Feature:

    HIGH RELIABILITY, PD-CASE

  • Application:

    EFFICIENCY

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON CARBIDE

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.75 V

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    135 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    32 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Power Dissipation-Max:

    333 W

  • Rep Pk Reverse Voltage-Max:

    1200 V

  • Reverse Current-Max:

    200 µA

  • Reverse Test Voltage:

    1200 V

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

FFSB20120A Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves placing a thermal pad on the bottom of the package, using a minimum of 2 oz copper thickness, and ensuring a solid ground plane on the top and bottom layers. Additionally, it's recommended to use vias to connect the thermal pad to the ground plane.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, including the maximum junction temperature (Tj) of 150°C. Additionally, ensure proper thermal management, such as using a heat sink or thermal interface material, and avoid exceeding the maximum power dissipation.
  • The recommended gate drive voltage for optimal switching performance is between 10V to 15V. This ensures that the MOSFET is fully enhanced, resulting in low RDS(on) and fast switching times.
  • To prevent shoot-through current during switching transitions, ensure that the gate drive circuitry is properly designed to provide a dead-time between the turn-off of one MOSFET and the turn-on of the other. A minimum dead-time of 10ns to 20ns is recommended.
  • The maximum allowed voltage ringing on the drain-source pins is 20V. Exceeding this limit can cause damage to the MOSFET or affect its reliability.

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FFSB20120A Overview

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