Description:Max Junction Temperature 175 oC; Avalanche Rated 24.5mJ; High Surge Current Capacity; Positive Temperature Coefficient; Ease of Paralleling; No Reverse Recovery / No Forward Recovery; AEC-Q101 Qualified
A good PCB layout for optimal thermal performance involves placing the device on a thick copper plane, using thermal vias to dissipate heat, and keeping the surrounding area clear of other components. A 2-3 oz copper thickness is recommended. Refer to onsemi's application note AND8193/D for more details.
To ensure reliable operation in high-temperature environments, follow the recommended operating conditions, use a suitable heat sink, and ensure good thermal interface material (TIM) between the device and heat sink. Also, consider derating the device's current handling capability according to the temperature derating curve provided in the datasheet.
The maximum allowed voltage transient on the drain-source pins is not explicitly stated in the datasheet. However, as a general guideline, it's recommended to limit the voltage transient to 10-20% of the maximum rated voltage (Vds) to prevent damage to the device. For specific applications, consult onsemi's support team or refer to relevant application notes.
Yes, the FFSD0665B-F085 is suitable for high-frequency switching applications. However, it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the layout and PCB design are optimized for high-frequency operation. Consult onsemi's application notes and support team for specific guidance.
The recommended gate drive voltage is typically between 10-15V, and the current depends on the specific application. A good starting point is to use a gate drive current of 1-2A. However, consult onsemi's application notes and support team for specific guidance on gate drive requirements for your application.
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FFSD0665B-F085 Overview
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