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FFSD1065B-F085 - onsemi

Description: Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10A, 650V, D2, DPAK

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FFSD1065B-F085 - onsemi PCB footprint - Other - Other - FFSD1065B-F085-1
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FFSD1065B-F085 - onsemi  - 3D model - Other - FFSD1065B-F085-1
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FFSD1065B-F085 Details

  • Manufacturer Part Number:

    FFSD1065B-F085

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    DPAK-3/2

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Date Of Intro:

    2018-07-30

  • Manufacturer:

    onsemi

  • YTEOL:

    6.62

  • Additional Feature:

    HIGH RELIABILITY, PD-CASE

  • Application:

    EFFICIENCY

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON CARBIDE

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.7 V

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    45 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    13.5 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Power Dissipation-Max:

    98 W

  • Reference Standard:

    AEC-Q101

  • Rep Pk Reverse Voltage-Max:

    650 V

  • Reverse Current-Max:

    40 µA

  • Reverse Test Voltage:

    650 V

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

FFSD1065B-F085 Frequently Asked Questions (FAQs)

  • A 2-layer PCB with a solid ground plane on the bottom layer and a thermal relief pattern on the top layer is recommended. This helps to dissipate heat efficiently and reduces thermal resistance.
  • Ensure that the device is operated within the recommended temperature range (up to 150°C). Use a heat sink or thermal interface material to improve heat dissipation. Also, consider derating the device's current rating at high temperatures.
  • A gate drive voltage of 10-15V is recommended for optimal switching performance. This ensures that the device is fully enhanced and minimizes switching losses.
  • Use a voltage clamp or a transient voltage suppressor (TVS) to protect the device from overvoltage conditions. Also, consider using a current sense resistor and a fuse to detect and respond to overcurrent conditions.
  • A dead time of 100-200 ns is recommended to minimize shoot-through current. This ensures that the device is fully turned off before the complementary device is turned on.

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FFSD1065B-F085 Overview

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Part Image FFSD1065B onsemi

Rectifier Diode, Schottky, 1 Phase, 1 Element, 13.5A, 650V V(RRM), Silicon Carbide, TO-252AA