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FFSH15120ADN_F155 - onsemi

Description: Silicon Carbide Schottky Diode 1200 V, 15 A

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FFSH15120ADN_F155 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO247-3L
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FFSH15120ADN_F155 - onsemi  - 3D model - Transistor Outline, Vertical - TO247-3L
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FFSH15120ADN_F155 Details

  • Manufacturer Part Number:

    FFSH15120ADN_F155

  • Brand Name:

    ON Semiconductor

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    R-PSFM-T3

  • Manufacturer Package Code:

    TO247G03

  • Reach Compliance Code:

    Compliant

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    onsemi

  • YTEOL:

    5.27

  • Additional Feature:

    HIGH RELIABILITY, PD-CASE

  • Application:

    EFFICIENCY

  • Case Connection:

    CATHODE

  • Configuration:

    COMMON CATHODE, 2 ELEMENTS

  • Diode Element Material:

    SILICON CARBIDE

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.75 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Non-rep Pk Forward Current-Max:

    80 A

  • Number of Elements:

    2

  • Number of Phases:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    8 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Power Dissipation-Max:

    110 W

  • Rep Pk Reverse Voltage-Max:

    1200 V

  • Reverse Current-Max:

    200 µA

  • Reverse Test Voltage:

    1200 V

  • Surface Mount:

    NO

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

FFSH15120ADN_F155 Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the device, connecting it to a large copper area on the PCB, and using multiple vias to dissipate heat. A minimum of 2oz copper thickness is recommended.
  • To ensure proper biasing, follow the recommended biasing circuit in the datasheet, and make sure the input voltage is within the specified range (typically 12V to 15V). Also, ensure the input voltage is well-regulated and filtered to minimize noise and ripple.
  • The maximum allowed case temperature for the FFSH15120ADN-F155 is 150°C. However, it's recommended to keep the case temperature below 125°C for optimal reliability and performance.
  • The FFSH15120ADN-F155 is not hermetically sealed, so it's not recommended for use in high-humidity environments. If you must use it in such an environment, ensure proper conformal coating and follow the manufacturer's guidelines for moisture protection.
  • The recommended storage condition for the FFSH15120ADN-F155 is in a dry, cool place with a temperature range of -40°C to 30°C and relative humidity below 60%. Avoid exposing the device to direct sunlight, moisture, or extreme temperatures.

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FFSH15120ADN_F155 Overview

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Part Image FFSH15120ADN-F155 onsemi

Silicon Carbide (SiC) Schottky Diode - EliteSiC, 15 A, 1200 V, D1, TO-247-3L Silicon Carbide (SiC) Schottky Diode ? EliteSiC, 15 A, 1200 V, D1, TO-247-3L, TO-247 3L, 450-TUBE