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FFSH30120ADN_F155 - onsemi

Description: Schottky Diodes & Rectifiers 1200V SiC SBD 30A

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FFSH30120ADN_F155 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - FFSH30120ADN_F155
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FFSH30120ADN_F155 - onsemi  - 3D model - Transistor Outline, Vertical - FFSH30120ADN_F155
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FFSH30120ADN_F155 Details

  • Manufacturer Part Number:

    FFSH30120ADN_F155

  • Brand Name:

    ON Semiconductor

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    R-PSFM-T3

  • Manufacturer Package Code:

    TO247G03

  • Reach Compliance Code:

    Compliant

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    onsemi

  • YTEOL:

    5.95

  • Additional Feature:

    HIGH RELIABILITY, PD-CASE

  • Application:

    EFFICIENCY

  • Case Connection:

    CATHODE

  • Configuration:

    COMMON CATHODE, 2 ELEMENTS

  • Diode Element Material:

    SILICON CARBIDE

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.75 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Non-rep Pk Forward Current-Max:

    125 A

  • Number of Elements:

    2

  • Number of Phases:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    15 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Power Dissipation-Max:

    195 W

  • Rep Pk Reverse Voltage-Max:

    1200 V

  • Reverse Current-Max:

    200 µA

  • Reverse Test Voltage:

    1200 V

  • Surface Mount:

    NO

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

FFSH30120ADN_F155 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. The device should be placed near a thermal pad or a heat sink to ensure good heat dissipation.
  • The device requires a stable input voltage (VIN) and a proper biasing circuit to ensure optimal performance. A voltage regulator or a voltage reference should be used to provide a stable input voltage, and a bias resistor network should be designed to set the desired output voltage.
  • The device's noise performance is affected by the quality of the input voltage, the output capacitor, and the PCB layout. A low-ESR output capacitor and a well-designed PCB layout with minimal noise coupling are essential for optimal noise performance.
  • The device should be protected from overvoltage and undervoltage conditions using voltage monitoring circuits, such as a voltage supervisor or a reset IC, to ensure the device operates within its specified voltage range.
  • The device's thermal design considerations include ensuring good heat dissipation, using a heat sink or thermal pad, and avoiding thermal hotspots on the PCB. The device's junction temperature should be kept below the maximum rated temperature to ensure reliability.

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FFSH30120ADN_F155 Overview

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Part Image FFSH30120ADN-F155 onsemi

Silicon Carbide (SiC) Schottky Diode - EliteSiC, 30 A, 1200 V, D1, TO-247-3L Silicon Carbide (SiC) Schottky Diode ? EliteSiC, 30 A, 1200 V, D1, TO-247-3L, TO-247 3L, 450-TUBE